TY - GEN
T1 - Design optimization of silicon nitride-based micro-ring resonator systems in a CMOS mass production environment
AU - Hinum-Wagner, Jakob Wilhelm
AU - Buchberger, Anton
AU - Schmidt, Christoph
AU - Schörner, Christian
AU - Rist, Desiree
AU - Hoermann, Samuel Marko
AU - Feigl, Gandolf
AU - Malicka, Iga
AU - Janka, Stephan
AU - Kraft, Jochen
AU - Bergmann, Alexander
N1 - Publisher Copyright:
© 2023 SPIE.
PY - 2023
Y1 - 2023
N2 - Micro-ring resonators (MRR) are basic photonic components, which serve as crucial building blocks for a variety of devices, e.g. integrated sensors, external cavity lasers, and high speed photonic data transmitters. Silicon nitride photonic platforms are particularly appealing in this field o f a pplication, s ince t his w aveguide material enables on-chip photonic circuitry with (ultra-) low losses in the NIR as well as across the whole visible spectral range. In this contribution we investigate key performance properties of MRRs in the wavelength range around 850 nm, such as free spectral range (FSR), quality factor (Q factor) and extinction ratio. We systematically investigate a large parameter space given by the MRR radii, coupling gaps between ring and bus waveguide, as well as waveguide width. Furthermore, we compare key properties such as the Q factor between low pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) Si3N4 platforms and find enhanced values for LPCVD ring resonators reaching nearly a Q factor of 106.The fabrication is carried out with standard CMOS foundry equipment, utilizing photolithography and reactive ion etching on 250 nm thick silicon nitride films. A s c ladding m aterial, h igh d ensity P ECVD s ilicon o xide i s d eposited p rior t o the waveguide onto bare silicon and a sputtered oxide serves as upper cladding. With this process toolbox full CMOS backend compatibility is achieved when considering only PECVD Si3N4 waveguide material. In terms of manufacturability, special focus is put on the die-to-die as well as on wafer-to-wafer variability of the performance parameters, which is crucial when considering mass production of MRR devices. Finally, the experimental findings are compared to finite difference time domain (FDTD) simulations of the MRR circuits revealing excellent agreement when considering the manufacturing variability.
AB - Micro-ring resonators (MRR) are basic photonic components, which serve as crucial building blocks for a variety of devices, e.g. integrated sensors, external cavity lasers, and high speed photonic data transmitters. Silicon nitride photonic platforms are particularly appealing in this field o f a pplication, s ince t his w aveguide material enables on-chip photonic circuitry with (ultra-) low losses in the NIR as well as across the whole visible spectral range. In this contribution we investigate key performance properties of MRRs in the wavelength range around 850 nm, such as free spectral range (FSR), quality factor (Q factor) and extinction ratio. We systematically investigate a large parameter space given by the MRR radii, coupling gaps between ring and bus waveguide, as well as waveguide width. Furthermore, we compare key properties such as the Q factor between low pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) Si3N4 platforms and find enhanced values for LPCVD ring resonators reaching nearly a Q factor of 106.The fabrication is carried out with standard CMOS foundry equipment, utilizing photolithography and reactive ion etching on 250 nm thick silicon nitride films. A s c ladding m aterial, h igh d ensity P ECVD s ilicon o xide i s d eposited p rior t o the waveguide onto bare silicon and a sputtered oxide serves as upper cladding. With this process toolbox full CMOS backend compatibility is achieved when considering only PECVD Si3N4 waveguide material. In terms of manufacturability, special focus is put on the die-to-die as well as on wafer-to-wafer variability of the performance parameters, which is crucial when considering mass production of MRR devices. Finally, the experimental findings are compared to finite difference time domain (FDTD) simulations of the MRR circuits revealing excellent agreement when considering the manufacturing variability.
KW - Design optimization
KW - Mass fabrication
KW - Micro-ring resonators
KW - NIR
KW - Silicon nitride waveguides
UR - http://www.scopus.com/inward/record.url?scp=85170638986&partnerID=8YFLogxK
U2 - 10.1117/12.2665322
DO - 10.1117/12.2665322
M3 - Conference paper
AN - SCOPUS:85170638986
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Integrated Optics
A2 - Cheben, Pavel
A2 - Ctyroky, Jiri
A2 - Molina-Fernandez, Inigo
PB - SPIE
T2 - Integrated Optics: Design, Devices, Systems and Applications VII 2023
Y2 - 24 April 2023 through 26 April 2023
ER -