TY - JOUR
T1 - Gas-Phase Synthesis of Iron Silicide Nanostructures Using a Single-Source Precursor
T2 - Comparing Direct-Write Processing and Thermal Conversion
AU - Jungwirth, Felix
AU - Salvador-Porroche, Alba
AU - Porrati, Fabrizio
AU - Jochmann, Nicolas P.
AU - Knez, Daniel
AU - Huth, Michael
AU - Gracia, Isabel
AU - Cané, Carles
AU - Cea, Pilar
AU - De Teresa, José María
AU - Barth, Sven
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/2/22
Y1 - 2024/2/22
N2 - The investigation of precursor classes for the fabrication of nanostructures is of specific interest for maskless fabrication and direct nanoprinting. In this study, the differences in material composition depending on the employed process are illustrated for focused-ion-beam- and focused-electron-beam-induced deposition (FIBID/FEBID) and compared to the thermal decomposition in chemical vapor deposition (CVD). This article reports on specific differences in the deposit composition and microstructure when the (H3Si)2Fe(CO)4 precursor is converted into an inorganic material. Maximum metal/metalloid contents of up to 90 at. % are obtained in FIBID deposits and higher than 90 at. % in CVD films, while FEBID with the same precursor provides material containing less than 45 at. % total metal/metalloid content. Moreover, the Fe:Si ratio is retained well in FEBID and CVD processes, but FIBID using Ga+ ions liberates more than 50% of the initial Si provided by the precursor. This suggests that precursors for FIBID processes targeting binary materials should include multiple bonding such as bridging positions for nonmetals. In addition, an in situ method for investigations of supporting thermal effects of precursor fragmentation during the direct-writing processes is presented, and the applicability of the precursor for nanoscale 3D FEBID writing is demonstrated.
AB - The investigation of precursor classes for the fabrication of nanostructures is of specific interest for maskless fabrication and direct nanoprinting. In this study, the differences in material composition depending on the employed process are illustrated for focused-ion-beam- and focused-electron-beam-induced deposition (FIBID/FEBID) and compared to the thermal decomposition in chemical vapor deposition (CVD). This article reports on specific differences in the deposit composition and microstructure when the (H3Si)2Fe(CO)4 precursor is converted into an inorganic material. Maximum metal/metalloid contents of up to 90 at. % are obtained in FIBID deposits and higher than 90 at. % in CVD films, while FEBID with the same precursor provides material containing less than 45 at. % total metal/metalloid content. Moreover, the Fe:Si ratio is retained well in FEBID and CVD processes, but FIBID using Ga+ ions liberates more than 50% of the initial Si provided by the precursor. This suggests that precursors for FIBID processes targeting binary materials should include multiple bonding such as bridging positions for nonmetals. In addition, an in situ method for investigations of supporting thermal effects of precursor fragmentation during the direct-writing processes is presented, and the applicability of the precursor for nanoscale 3D FEBID writing is demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=85185249339&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.3c08250
DO - 10.1021/acs.jpcc.3c08250
M3 - Article
AN - SCOPUS:85185249339
SN - 1932-7447
VL - 128
SP - 2967
EP - 2977
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 7
ER -