High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

Evelin Fisslthaler; Georg Haberfehlner; Christian Gspan; G. Gruber; Werner Grogger

High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

Evelin Fisslthaler, Georg Haberfehlner, Christian Gspan, G. Gruber, Werner Grogger

Institut für Elektronenmikroskopie und Nanoanalytik (5190)

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Originalsprache	englisch
Titel	ESREF2019_Proceedings
Kapitel	session C 2.1
Seitenumfang	6
Publikationsstatus	Veröffentlicht - 2019
Veranstaltung	30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Centre de congres P. Baudis, Toulouse , Frankreich Dauer: 23 Sept. 2019 → 26 Sept. 2019 https://imina.ch/events/conference-semiconductor-Failure-Analysis-ESREF-2019-Toulouse-France

Konferenz

Konferenz	30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Kurztitel	ESREF 2019
Land/Gebiet	Frankreich
Ort	Toulouse
Zeitraum	23/09/19 → 26/09/19
Internetadresse	https://imina.ch/events/conference-semiconductor-Failure-Analysis-ESREF-2019-Toulouse-France

ASJC Scopus subject areas

Allgemeine Materialwissenschaften

Fields of Expertise

Advanced Materials Science

Treatment code (Nähere Zuordnung)

Basic - Fundamental (Grundlagenforschung)

Dieses zitieren

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title = "High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM",

author = "Evelin Fisslthaler and Georg Haberfehlner and Christian Gspan and G. Gruber and Werner Grogger",

year = "2019",

language = "English",

booktitle = "ESREF2019_Proceedings",

note = "30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis , ESREF 2019 ; Conference date: 23-09-2019 Through 26-09-2019",

url = "https://imina.ch/events/conference-semiconductor-Failure-Analysis-ESREF-2019-Toulouse-France",

}

TY - GEN

T1 - High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

AU - Fisslthaler, Evelin

AU - Haberfehlner, Georg

AU - Gspan, Christian

AU - Gruber, G.

AU - Grogger, Werner

PY - 2019

Y1 - 2019

M3 - Conference paper

BT - ESREF2019_Proceedings

T2 - 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Y2 - 23 September 2019 through 26 September 2019

ER -