Abstract
The increase of the dielectric permittivity with an electric field and enhanced energy storage properties make antiferroelectrics very attractive for high-power electronic applications needed in emerging green energy technologies and neuromorphic computing platforms. Their exceptional functional properties are closely related to the electric field-induced antiferroelectric↔ferroelectric phase transition, which can be driven toward a critical end point by manipulation with an external electric field. The critical fluctuation of physical properties at the critical end point in ferroelectrics is a promising approach to improve their functional properties. Here, we demonstrate the existence of two critical end points in antiferroelectric ceramics with a ferroelectric-antiferroelectric-paraelectric phase sequence, using the model system Pb0.99Nb0.02[(Zr0.57Sn0.43)0.92Ti0.08]0.98O3. The critical fluctuation of the dielectric permittivity in the proximity of the antiferroelectric-to-paraelectric critical end point is responsible for the strong enhancement of the dielectric tunability (by a factor of >2) measured at ≈395 K. The enhancement of the energy storage density at ≈370 K is related to the proximity of the ferroelectric-to-antiferroelectric critical end point. These findings open possibilities for material design and pave the way for the next generation of high-energy storage materials.
Originalsprache | englisch |
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Aufsatznummer | 114407 |
Fachzeitschrift | Physical Review Materials |
Jahrgang | 7 |
Ausgabenummer | 11 |
DOIs | |
Publikationsstatus | Veröffentlicht - 2023 |
ASJC Scopus subject areas
- Allgemeine Materialwissenschaften
- Physik und Astronomie (sonstige)