Volcano effect in open through silicon via (TSV) technology

J. Kraft; E. Stückler; C. Cassidy; W. Niko; F. Schrank; E. Wachmann; Christian Gspan; Ferdinand Hofer

doi:10.1109/IRPS.2012.6241924

Volcano effect in open through silicon via (TSV) technology

J. Kraft, E. Stückler, C. Cassidy, W. Niko, F. Schrank, E. Wachmann, Christian Gspan, Ferdinand Hofer

Institut für Elektronenmikroskopie und Nanoanalytik (5190)

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Originalsprache	englisch
Titel	2012 IEEE International Reliability Physics Symposium
Erscheinungsort	Piscataway, NY
Herausgeber (Verlag)	Institute of Electrical and Electronics Engineers
Seiten	PI2.1-PI2.5
ISBN (Print)	978-1-4577-1678-2
DOIs	https://doi.org/10.1109/IRPS.2012.6241924
Publikationsstatus	Veröffentlicht - 2012
Veranstaltung	IEEE International Reliability Physics Symposium - Anaheim, USA / Vereinigte Staaten Dauer: 15 Apr. 2012 → 19 Apr. 2012

Konferenz

Konferenz	IEEE International Reliability Physics Symposium
Land/Gebiet	USA / Vereinigte Staaten
Ort	Anaheim
Zeitraum	15/04/12 → 19/04/12

Fields of Expertise

Advanced Materials Science

Treatment code (Nähere Zuordnung)

Basic - Fundamental (Grundlagenforschung)

Zugriff auf Dokument

10.1109/IRPS.2012.6241924

Dieses zitieren

Kraft, J, Stückler, E, Cassidy, C, Niko, W, Schrank, F, Wachmann, E, Gspan, C & Hofer, F 2012, Volcano effect in open through silicon via (TSV) technology. in 2012 IEEE International Reliability Physics Symposium. Institute of Electrical and Electronics Engineers, Piscataway, NY, S. PI2.1-PI2.5, IEEE International Reliability Physics Symposium, Anaheim, USA / Vereinigte Staaten, 15/04/12. https://doi.org/10.1109/IRPS.2012.6241924

@inproceedings{0f5aad7f732d40eb82c0524511dbb062,

title = "Volcano effect in open through silicon via (TSV) technology",

author = "J. Kraft and E. St{\"u}ckler and C. Cassidy and W. Niko and F. Schrank and E. Wachmann and Christian Gspan and Ferdinand Hofer",

year = "2012",

doi = "10.1109/IRPS.2012.6241924",

language = "English",

isbn = "978-1-4577-1678-2",

pages = "PI2.1--PI2.5",

booktitle = "2012 IEEE International Reliability Physics Symposium",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "IEEE International Reliability Physics Symposium ; Conference date: 15-04-2012 Through 19-04-2012",

}

TY - GEN

T1 - Volcano effect in open through silicon via (TSV) technology

AU - Kraft, J.

AU - Stückler, E.

AU - Cassidy, C.

AU - Niko, W.

AU - Schrank, F.

AU - Wachmann, E.

AU - Gspan, Christian

AU - Hofer, Ferdinand

PY - 2012

Y1 - 2012

U2 - 10.1109/IRPS.2012.6241924

DO - 10.1109/IRPS.2012.6241924

M3 - Conference paper

SN - 978-1-4577-1678-2

SP - PI2.1-PI2.5

BT - 2012 IEEE International Reliability Physics Symposium

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway, NY

T2 - IEEE International Reliability Physics Symposium

Y2 - 15 April 2012 through 19 April 2012

ER -