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2018
Aspect ratio of radiation-hradened MOS transisotrs: Modelling of the equivalent channel dimensions of integrated MOS transistors in radiation-hardened enclosed layout
Bezhenova, V. & Michalowska-Forsyth, A. M., 17 Jan 2018, (E-pub ahead of print) In: Elektrotechnik und Informationstechnik. 8 p., 1613-7620.Research output: Contribution to journal › Special issue › peer-review
Open Access