Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators

Semih Ramazanoglu; Alicja Michalowska-Forsyth; Bernd Deutschmann

doi:10.1007/s00502-023-01197-3

Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators

Semih Ramazanoglu^*, Alicja Michalowska-Forsyth, Bernd Deutschmann

^*Corresponding author for this work

Institute of Electronics (4390)

Research output: Contribution to journal › Article › peer-review

Abstract

Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% Δf/ f_mean is found in 60% of cells in the array. Further, the capture and emission time constant τ_e_/_/_c can be extracted from the measurements, the values observed ranging from 0.2 μ s to 10 ms.

Translated title of the contribution	Bias-Abhängigkeit in der Analyse von statistischem Telegrafenrauschen auf Basis von CMOS-Ringoszillatoren in Nanotechnologien
Original language	English
Pages (from-to)	37-46
Number of pages	10
Journal	Elektrotechnik und Informationstechnik
Volume	141
Issue number	1
DOIs	https://doi.org/10.1007/s00502-023-01197-3
Publication status	Published - Mar 2024

Keywords

Jitter
Oxide trap
Random telegraph noise
Ring oscillator
RTN

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1007/s00502-023-01197-3Licence: CC BY 4.0

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title = "Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators",

abstract = "Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% Δf/ fmean is found in 60% of cells in the array. Further, the capture and emission time constant τe//c can be extracted from the measurements, the values observed ranging from 0.2 μ s to 10 ms.",

keywords = "Jitter, Oxide trap, Random telegraph noise, Ring oscillator, RTN",

author = "Semih Ramazanoglu and Alicja Michalowska-Forsyth and Bernd Deutschmann",

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doi = "10.1007/s00502-023-01197-3",

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AU - Ramazanoglu, Semih

AU - Michalowska-Forsyth, Alicja

AU - Deutschmann, Bernd

PY - 2024/3

Y1 - 2024/3

N2 - Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% Δf/ fmean is found in 60% of cells in the array. Further, the capture and emission time constant τe//c can be extracted from the measurements, the values observed ranging from 0.2 μ s to 10 ms.

AB - Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% Δf/ fmean is found in 60% of cells in the array. Further, the capture and emission time constant τe//c can be extracted from the measurements, the values observed ranging from 0.2 μ s to 10 ms.

KW - Jitter

KW - Oxide trap

KW - Random telegraph noise

KW - Ring oscillator

KW - RTN

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Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators

Abstract

Keywords

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