Abstract
Metal–organic frameworks (MOFs) offer disruptive potential in micro- and optoelectronics because of the unique properties of these microporous materials. Nanoscale patterning is a fundamental step in the implementation of MOFs in miniaturized solid-state devices. Conventional MOF patterning methods suffer from low resolution and poorly defined pattern edges. Here, we demonstrate the resist-free, direct X-ray and electron-beam lithography of MOFs. This process avoids etching damage and contamination and leaves the porosity and crystallinity of the patterned MOFs intact. The resulting high-quality patterns have excellent sub-50-nm resolution, and approach the mesopore regime. The compatibility of X-ray and electron-beam lithography with existing micro- and nanofabrication processes will facilitate the integration of MOFs in miniaturized devices.
Original language | English |
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Pages (from-to) | 93-99 |
Number of pages | 7 |
Journal | Nature Materials |
Volume | 20 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2021 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- General Chemistry
- General Materials Science