Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs

Andrea Minetto, Nicola Modolo, Luca Sayadi, Christian Koller, Clemens Ostermaier, Matteo Meneghini, Enrico Zanoni, Gerhard Prechtl, Sebastien Sicre, Bernd Deutschmann, Oliver Haberlen

Research output: Contribution to journalArticlepeer-review


In this work, an analysis of the impact of drain field plate (FP) length on the semi-on degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. A wafer-level characterization, by means of pulsed stress tests, reveals a faster and more severe decrease of the drain current in the linear region for the samples with longer drain FP. 2-D technology computer-aided design (TCAD) hydrodynamic simulations show that a time and field-dependent hot electrons (HEs) trapping takes place at the passivation/barrier interface. The higher drain current decrease in the longer FP samples can be ascribed to an enhanced HE trapping at the drain FP edge due to a different electric field distribution.

Original languageEnglish
Pages (from-to)5003 - 5008
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number10
Publication statusPublished - Oct 2021


  • Degradation
  • Dynamic effects
  • gallium nitride
  • hard-switching (HSW)
  • HEMTs
  • high-electron-mobility transistor (HEMT)
  • hot electrons (HEs)
  • hydrodynamic (HD) simulations
  • Logic gates
  • semi-on.
  • Stress
  • Transient analysis
  • Wide band gap semiconductors
  • semi-ON

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fields of Expertise

  • Information, Communication & Computing

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