Effects of TVS integration on system level ESD robustness

Wei Huang; Jeffrey Dunnihoo; David Pommerenke

Effects of TVS integration on system level ESD robustness

Wei Huang^*, Jeffrey Dunnihoo, David Pommerenke

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

Higher integration of Transient Voltage Suppression (TVS) functionality into ASIC I/O cells implies lower system costs. But as the ESD pulse is directed deeper into the system, migrating the TVS clamping function from the periphery of the system to a central ASIC may actually reduce the system's ESD robustness. ESD current reconstruction scanning can be used to trace the current path on a PCB, and possibly within an IC. The article compares the current spreading during and ESD for different ESD protection methods.

Original language	English
Title of host publication	Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, EOS/ESD 2010
Publication status	Published - 24 Dec 2010
Externally published	Yes
Event	32nd Annual Electrical Overstress/Electrostatic Discharge Symposium: EOS/ESD 2010 - Reno, United States Duration: 3 Oct 2010 → 8 Oct 2010

Publication series

Name	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)	0739-5159

Conference

Conference	32nd Annual Electrical Overstress/Electrostatic Discharge Symposium
Country/Territory	United States
City	Reno
Period	3/10/10 → 8/10/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Effects of TVS integration on system level ESD robustness. / Huang, Wei; Dunnihoo, Jeffrey; Pommerenke, David.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, EOS/ESD 2010. 2010. 5623717 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Huang, W, Dunnihoo, J & Pommerenke, D 2010, Effects of TVS integration on system level ESD robustness. in Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, EOS/ESD 2010., 5623717, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 32nd Annual Electrical Overstress/Electrostatic Discharge Symposium, Reno, Nevada, United States, 3/10/10.

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Effects of TVS integration on system level ESD robustness

Abstract

Publication series

Conference

ASJC Scopus subject areas

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