Field effect transistors based on poly(3-hexylthiophene) at different length scales

M. Mas-Torrent*, D. Den Boer, M. Durkut, P. Hadley, A. P H J Schenning

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


In this paper we report on thin film transistors based on drop casting solutions of regioregular poly(3-hexylthiophene) (P3HT) over prefabricated gold electrodes. This polymer is known to self-organize into a lamellar structure in chloroform resulting in high field-effect mobilities. We studied the dependency of the charge carrier mobility of devices prepared from solution in chloroform with electrode spacings ranging from 5 μm to 20 nm. It was found that the overall trend was that the mobility decreased as the electrode spacing was made smaller, indicating that the transport properties on closely spaced electrodes were dominated by the contacts. Applying an ac voltage during the preparation of such films resulted in lower mobilities. However, P3HT in p-xylene forms fibres, which were aligned between the electrodes by applying an ac field. Films of aligned fibres with mobilities as high as 0.04 cm2 V-1 s-1 were prepared.

Original languageEnglish
Issue number4
Publication statusPublished - Apr 2004
Externally publishedYes

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)


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