Hot electron effects in AlGaN/GaN HEMTs during hard-switching events

Andrea Minetto*, Nicola Modolo, Matteo Meneghini, Enrico Zanoni, Luca Sayadi, Sébastien Sicre, Bernd Deutschmann, Oliver Häberlen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


This work contains an investigation of hot-electrons effects in GaN transistors during a hard-switching event by means of wafer-level measurements and TCAD mixed-mode hydrodynamic simulations. The latter reveals the presence of hot electrons at the passivation/barrier interface during commutation. Trapping in this location can explain the measured on-state resistance increase during switching operation and leads to a redistribution of the lateral electric field in the two-dimensional electron gas, which in return modulates the hot electron injection process.

Original languageEnglish
Article number114208
JournalMicroelectronics Reliability
Publication statusPublished - Nov 2021


  • Dynamic effects
  • Gallium nitride
  • Hard-switching
  • Hot electrons
  • Hydrodynamic simulations
  • Semi-ON

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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