Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfaces

Katharina N.S. Schuldt, Hui Ding, Jean Christophe Jaud, Jurij Koruza, Andreas Klein*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The Schottky barrier formation between polycrystalline acceptor-doped BaTiO3 and high work function RuO2 is studied using photoelectron spectroscopy. Schottky barrier heights for electrons of ≈1.4 eV are determined, independent of doping level and oxygen vacancy concentration of the substrates. The insensitivity of the barrier height is related to the high permittivity of BaTiO3, which results in space-charge regions (SCRs) being considerably wider than the inelastic mean free path of the photoelectrons. SCRs at any kind of interface should, therefore, be more important for the electronic and ionic conductivities in BaTiO3 than in materials with lower permittivity. A Ba-rich phase at the surface of reduced acceptor-doped BaTiO3 is also identified, which is explained by the formation of Ti vacancies in the 2D electron gas region at the surface.

Original languageEnglish
Article number2100143
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number14
Publication statusPublished - Jul 2021
Externally publishedYes


  • BaTiO
  • defects
  • Schottky barriers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fields of Expertise

  • Advanced Materials Science

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