Multiple proton implantations into silicon: A combined EBIC and SRP study

S. Kirnstötter; M. Faccinelli; M. Jelinek; W. Schustereder; J. G. Laven; H. J. Schulze; P. Hadley

doi:10.4028/www.scientific.net/SSP.205-206.311

Multiple proton implantations into silicon: A combined EBIC and SRP study

S. Kirnstötter, M. Faccinelli, M. Jelinek, W. Schustereder, J. G. Laven, H. J. Schulze, P. Hadley

Institute of Solid State Physics (5130)

Research output: Contribution to journal › Article › peer-review

Abstract

Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects.

Original language	English
Pages (from-to)	311-316
Number of pages	6
Journal	Solid State Phenomena
Volume	205-206
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.205-206.311
Publication status	Published - 2014
Event	15th Gettering and Defect Engineering in Semiconductor Technology: GADEST 2013 - Oxford, United Kingdom Duration: 22 Sept 2013 → 27 Sept 2013

Keywords

Defects in semiconductors
Diffusion
Doping type
Electron beam induced current (EBIC)
Hydrogen/proton implantation
Spreading resistance profiling (SRP)

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics

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Cite this

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title = "Multiple proton implantations into silicon: A combined EBIC and SRP study",

abstract = "Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects.",

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language = "English",

volume = "205-206",

pages = "311--316",

journal = "Solid State Phenomena",

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AU - Kirnstötter, S.

AU - Faccinelli, M.

AU - Jelinek, M.

AU - Schustereder, W.

AU - Laven, J. G.

AU - Schulze, H. J.

AU - Hadley, P.

PY - 2014

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AB - Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects.

KW - Defects in semiconductors

KW - Diffusion

KW - Doping type

KW - Electron beam induced current (EBIC)

KW - Hydrogen/proton implantation

KW - Spreading resistance profiling (SRP)

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VL - 205-206

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JO - Solid State Phenomena

JF - Solid State Phenomena

Y2 - 22 September 2013 through 27 September 2013

ER -

Multiple proton implantations into silicon: A combined EBIC and SRP study

Abstract

Keywords

ASJC Scopus subject areas

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