Negative differential resistance due to single-electron switching

C. P. Heij; D. C. Dixon; P. Hadley; J. E. Mooij

Negative differential resistance due to single-electron switching

C. P. Heij^*, D. C. Dixon, P. Hadley, J. E. Mooij

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al_xO_y islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

Original language	English
Pages (from-to)	1042-1044
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	7
Publication status	Published - 15 Feb 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

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title = "Negative differential resistance due to single-electron switching",

abstract = "We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.",

author = "Heij, {C. P.} and Dixon, {D. C.} and P. Hadley and Mooij, {J. E.}",

year = "1999",

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language = "English",

volume = "74",

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journal = "Applied Physics Letters",

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T1 - Negative differential resistance due to single-electron switching

AU - Heij, C. P.

AU - Dixon, D. C.

AU - Hadley, P.

AU - Mooij, J. E.

PY - 1999/2/15

Y1 - 1999/2/15

N2 - We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

AB - We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

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M3 - Article

AN - SCOPUS:0007836179

SN - 0003-6951

VL - 74

SP - 1042

EP - 1044

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Negative differential resistance due to single-electron switching

Abstract

ASJC Scopus subject areas

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