Abstract
Thermal stress of the power semiconductor is one of the most important indicators for the reliability assessment of power electronics-based power systems. The mapping of the Insulated-Gate Bipolar Transistor (IGBT) junction temperature is usually required to analyze the thermal stress and loss dissipation. However, it is difficult to identify inherent mechanisms of the bond-wire and solder layer failure modes in IGBT power modules. In order to solve the problem, an online method to identify inherent mechanisms of the bond-wire and solder layer failure modes in IGBT power modules is proposed. This method can separate the root causes of the bond-wire lift-off and solder layer fatigue by measuring the on-state voltage drop through a sinusoidal loading current based on an H-bridge circuit, together with its corresponding control and measurement. By comparing the on-state voltage drop at the intersection current and the peak current of the converter, the wear-out conditions of the IGBT power modules can be monitored in real-time with the determination of different failure modes. Finally, experimental results are presented in order to verify the effectiveness and feasibility of the proposed method.
Original language | English |
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Article number | 9672744 |
Pages (from-to) | 2324-2331 |
Number of pages | 8 |
Journal | IEEE Transactions on Industry Applications |
Volume | 58 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Apr 2022 |
Externally published | Yes |
Keywords
- Fatigue
- Insulated gate bipolar transistors
- Loading
- Monitoring
- Temperature measurement
- Thermal loading
- Voltage measurement
- Bond-wire lift-off
- converter
- power semiconductor
- reliability
- solder layer fatigue
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering