Simulating Hybrid Circuits of Single-Electron Transistors and Field-Effect Transistors

Günther Lientschnig*, Irek Weymann, Peter Hadley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


An exact model for a single-electron transistor was developed within the circuit simulation package SPICE. This model uses the orthodox theory of single-electron tunneling and determines the average current through the transistor as a function of the bias voltage, the gate voltage, and the temperature. Circuits including single-electron transistors,' field-effect transistors (FETs), and operational amplifiers were then simulated. In these circuits, the single-electron transistors provide the charge sensitivity while the FETs tune the background charges, provide gain, and provide low output impedance.

Original languageEnglish
Pages (from-to)6467-6472
Number of pages6
Journal Japanese Journal of Applied Physics
Issue number10
Publication statusPublished - Oct 2003
Externally publishedYes


  • Background charge problem
  • Charge-locked loop
  • Circuit simulation
  • Device modeling
  • Hybrid SET-FET circuits
  • Orthodox theory
  • Ring oscillator
  • SET
  • Single-electron tunneling

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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