Single-electron inverter

C. P. Heij; P. Hadley; J. E. Mooij

doi:10.1063/1.1345822

Single-electron inverter

C. P. Heij^*, P. Hadley, J. E. Mooij

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the inverter must exhibit voltage gain. Voltage gain was achieved by fabricating a combination of parallel-plate gate capacitors and small tunnel junctions in a two-layer circuit. Voltage gain of 2.6 was attained at 25 mK and remained larger than one for temperatures up to 140 mK. The temperature dependence of the gain agrees with the orthodox theory of single-electron tunneling.

Original language	English
Pages (from-to)	1140-1142
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	8
DOIs	https://doi.org/10.1063/1.1345822
Publication status	Published - 19 Feb 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1345822

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AU - Mooij, J. E.

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AB - A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the inverter must exhibit voltage gain. Voltage gain was achieved by fabricating a combination of parallel-plate gate capacitors and small tunnel junctions in a two-layer circuit. Voltage gain of 2.6 was attained at 25 mK and remained larger than one for temperatures up to 140 mK. The temperature dependence of the gain agrees with the orthodox theory of single-electron tunneling.

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Single-electron inverter

Abstract

ASJC Scopus subject areas

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