Solution-Processable Cu3BiS3 Thin Films: Growth Process Insights and Increased Charge Generation Properties by Interface Modification

Thomas Rath; Jose M. Marin-Beloqui; Xinyu Bai; Astrid-Caroline Knall; Marco Sigl; Fernando Gustavo Warchomicka; Thomas Grießer; Heinz Amenitsch; Saif A. Haque

doi:10.1021/acsami.3c10297

Solution-Processable Cu3BiS3 Thin Films: Growth Process Insights and Increased Charge Generation Properties by Interface Modification

Thomas Rath^*, Jose M. Marin-Beloqui, Xinyu Bai, Astrid-Caroline Knall, Marco Sigl, Fernando Gustavo Warchomicka, Thomas Grießer, Heinz Amenitsch^*, Saif A. Haque^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Cu3BiS3 thin films are fabricated via spin coating of precursor solutions containing copper and bismuth xanthates onto planar glass substrates or mesoporous metal oxide scaffolds followed by annealing at 300 °C to convert the metal xanthates into copper bismuth sulfide. Detailed insights into the film formation are gained from time-resolved simultaneous small and wide angle X-ray scattering measurements. The Cu3BiS3 films show a high absorption coefficient and a band gap of 1.55 eV, which makes them attractive for application in photovoltaic devices. Transient absorption spectroscopic measurements reveal that charge generation yields in mesoporous TiO2/Cu3BiS3 heterojunctions can be significantly improved by the introduction of an In2S3 interlayer, and long-lived charge carriers (t50% of 10 μs) are found.

Original language	English
Pages (from-to)	41624-41633
Number of pages	10
Journal	ACS Applied Materials & Interfaces
Volume	15
Issue number	35
DOIs	https://doi.org/10.1021/acsami.3c10297
Publication status	Published - 6 Sept 2023

Keywords

interface
metal sulfides
precursor chemistry
transient absorption spectroscopy
X-ray scattering

ASJC Scopus subject areas

General Materials Science

Fields of Expertise

Advanced Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1021/acsami.3c10297Licence: CC BY 4.0

rath-et-al-2023-solution-processable-cu3bis3-thin-films-growth-process-insights-and-increased-charge-generationFinal published version, 5.93 MBLicence: CC BY 4.0

Cite this

@article{be21c33c1001474c8cf04b67d1c1520d,

title = "Solution-Processable Cu3BiS3 Thin Films: Growth Process Insights and Increased Charge Generation Properties by Interface Modification",

abstract = "Cu3BiS3 thin films are fabricated via spin coating of precursor solutions containing copper and bismuth xanthates onto planar glass substrates or mesoporous metal oxide scaffolds followed by annealing at 300 °C to convert the metal xanthates into copper bismuth sulfide. Detailed insights into the film formation are gained from time-resolved simultaneous small and wide angle X-ray scattering measurements. The Cu3BiS3 films show a high absorption coefficient and a band gap of 1.55 eV, which makes them attractive for application in photovoltaic devices. Transient absorption spectroscopic measurements reveal that charge generation yields in mesoporous TiO2/Cu3BiS3 heterojunctions can be significantly improved by the introduction of an In2S3 interlayer, and long-lived charge carriers (t50% of 10 μs) are found.",

keywords = "interface, metal sulfides, precursor chemistry, transient absorption spectroscopy, X-ray scattering",

author = "Thomas Rath and Marin-Beloqui, {Jose M.} and Xinyu Bai and Astrid-Caroline Knall and Marco Sigl and Warchomicka, {Fernando Gustavo} and Thomas Grie{\ss}er and Heinz Amenitsch and Haque, {Saif A.}",

year = "2023",

month = sep,

day = "6",

doi = "10.1021/acsami.3c10297",

language = "English",

volume = "15",

pages = "41624--41633",

journal = "ACS Applied Materials & Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "35",

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TY - JOUR

T1 - Solution-Processable Cu3BiS3 Thin Films: Growth Process Insights and Increased Charge Generation Properties by Interface Modification

AU - Rath, Thomas

AU - Marin-Beloqui, Jose M.

AU - Bai, Xinyu

AU - Knall, Astrid-Caroline

AU - Sigl, Marco

AU - Warchomicka, Fernando Gustavo

AU - Grießer, Thomas

AU - Amenitsch, Heinz

AU - Haque, Saif A.

PY - 2023/9/6

Y1 - 2023/9/6

N2 - Cu3BiS3 thin films are fabricated via spin coating of precursor solutions containing copper and bismuth xanthates onto planar glass substrates or mesoporous metal oxide scaffolds followed by annealing at 300 °C to convert the metal xanthates into copper bismuth sulfide. Detailed insights into the film formation are gained from time-resolved simultaneous small and wide angle X-ray scattering measurements. The Cu3BiS3 films show a high absorption coefficient and a band gap of 1.55 eV, which makes them attractive for application in photovoltaic devices. Transient absorption spectroscopic measurements reveal that charge generation yields in mesoporous TiO2/Cu3BiS3 heterojunctions can be significantly improved by the introduction of an In2S3 interlayer, and long-lived charge carriers (t50% of 10 μs) are found.

AB - Cu3BiS3 thin films are fabricated via spin coating of precursor solutions containing copper and bismuth xanthates onto planar glass substrates or mesoporous metal oxide scaffolds followed by annealing at 300 °C to convert the metal xanthates into copper bismuth sulfide. Detailed insights into the film formation are gained from time-resolved simultaneous small and wide angle X-ray scattering measurements. The Cu3BiS3 films show a high absorption coefficient and a band gap of 1.55 eV, which makes them attractive for application in photovoltaic devices. Transient absorption spectroscopic measurements reveal that charge generation yields in mesoporous TiO2/Cu3BiS3 heterojunctions can be significantly improved by the introduction of an In2S3 interlayer, and long-lived charge carriers (t50% of 10 μs) are found.

KW - interface

KW - metal sulfides

KW - precursor chemistry

KW - transient absorption spectroscopy

KW - X-ray scattering

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U2 - 10.1021/acsami.3c10297

DO - 10.1021/acsami.3c10297

M3 - Article

SN - 1944-8244

VL - 15

SP - 41624

EP - 41633

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

IS - 35

ER -

Solution-Processable Cu3BiS3 Thin Films: Growth Process Insights and Increased Charge Generation Properties by Interface Modification

Abstract

Keywords

ASJC Scopus subject areas

Fields of Expertise

UN SDGs

Access to Document

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Porous Materials @ Work for Sustainability

Cite this

Solution-Processable Cu3BiS3 Thin Films: Growth Process Insights and Increased Charge Generation Properties by Interface Modification

Abstract

Keywords

ASJC Scopus subject areas

Fields of Expertise

UN SDGs

Access to Document

Other files and links

Fingerprint

Projects

Porous Materials @ Work for Sustainability

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