Striking field-induced changes in the absorption near the Si L-edge of SiO2 exposed to a near-infrared laser field of several V/Å delivered by a few-cycle pulse are observed with sub-100 attosecond extreme ultraviolet pulses by means of attosecond transient absorption.
|Number of pages||3|
|Journal||EPJ Web of Conferences|
|Publication status||Published - 2013|
Fields of Expertise
- Advanced Materials Science