System-Level Modeling for Transient Electrostatic Discharge Simulation

Tianqi Li, Viswa Pilla, Zhen Li, Junji Maeshima, Hideki Shumiya, Kenji Araki, David J. Pommerenke

Research output: Contribution to journalArticlepeer-review


This paper introduces an improved electrostatic discharge (ESD) system-level transient simulation modeling method and discusses its validation using IEC 61000-4-2 ESD pulses on a real-world product. The system model is composed of high current and broadband (up to 3 GHz) models of R, L, C, ferrite beads, diodes, and integrated circuit IO pins. A complex return path model is the key to correctly model the system's response to the IEC excitation. The model includes energy-limited time-dependent IC damage models. A power-time integral method is introduced to accurately determine if a junction would experience thermal runaway under an arbitrary injection waveform. The proposed method does not require knowledge of the junction's microscopic geometry, material information, defect location, or melting temperature.

Original languageEnglish
Article number7217815
Pages (from-to)1208-1308
Number of pages101
JournalIEEE Transactions on Electromagnetic Compatibility
Issue number6
Publication statusPublished - 1 Dec 2015
Externally publishedYes


  • Common mode
  • electromagnetic compatibility (EMC)
  • electrostatic discharge (ESD)
  • human machine model (HMM)
  • IEC 61000-4-2
  • system efficient ESD design (SEED)
  • transmission line pulser (TLP)

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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