Thin Film Growth of a Charge Transfer Cocrystal (DCS/TFPA) for Ambipolar Thin Film Transistors

Wolfgang Rao Bodlos; Sang Kyu Park; Birgit Kunert; Soo Young Park; Roland Resel

doi:10.1021/acsaelm.1c00367

Thin Film Growth of a Charge Transfer Cocrystal (DCS/TFPA) for Ambipolar Thin Film Transistors

Wolfgang Rao Bodlos^*, Sang Kyu Park, Birgit Kunert, Soo Young Park, Roland Resel^*

^*Corresponding author for this work

Institute of Solid State Physics (5130)

Research output: Contribution to journal › Article › peer-review

Abstract

The highly luminescent dicyanodistyrylbenzene-based charge-transfer (CT) cocrystal based on isometric donor and acceptor molecules with a mixing ratio of 2:1 is characterized in the thin film regime. Physical vapor deposited films prepared at different substrate temperatures are analyzed in terms of their thin film structure and transistor performance. The thin film morphologies and crystallographic properties including microstrain and mosaic spread strongly dependent on the substrate temperature. Enhanced crystal growth with rising temperatures leads to a better transistor performance reaching its maximum at 90 °C with a hole and electron mobility of 1.6 × 10-3 and 2.3 × 10-5 cm2 V-1 s-1, respectively. At higher temperatures performance decreases limited by percolation pathways between the enlarged crystals.

Original language	English
Pages (from-to)	2783-2789
Number of pages	7
Journal	ACS Applied Electronic Materials
Volume	3
Issue number	6
DOIs	https://doi.org/10.1021/acsaelm.1c00367
Publication status	Published - 22 Jun 2021

Keywords

ambipolar organic transistor
charge transfer crystal
organic thin film transistor
physical vapor deposition
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Electrochemistry

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10.1021/acsaelm.1c00367Licence: CC BY 4.0

Cite this

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title = "Thin Film Growth of a Charge Transfer Cocrystal (DCS/TFPA) for Ambipolar Thin Film Transistors",

abstract = "The highly luminescent dicyanodistyrylbenzene-based charge-transfer (CT) cocrystal based on isometric donor and acceptor molecules with a mixing ratio of 2:1 is characterized in the thin film regime. Physical vapor deposited films prepared at different substrate temperatures are analyzed in terms of their thin film structure and transistor performance. The thin film morphologies and crystallographic properties including microstrain and mosaic spread strongly dependent on the substrate temperature. Enhanced crystal growth with rising temperatures leads to a better transistor performance reaching its maximum at 90 °C with a hole and electron mobility of 1.6 × 10-3 and 2.3 × 10-5 cm2 V-1 s-1, respectively. At higher temperatures performance decreases limited by percolation pathways between the enlarged crystals.",

keywords = "ambipolar organic transistor, charge transfer crystal, organic thin film transistor, physical vapor deposition, X-ray diffraction",

author = "Bodlos, {Wolfgang Rao} and Park, {Sang Kyu} and Birgit Kunert and Park, {Soo Young} and Roland Resel",

year = "2021",

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doi = "10.1021/acsaelm.1c00367",

language = "English",

volume = "3",

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journal = "ACS Applied Electronic Materials",

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publisher = "American Chemical Society",

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AU - Bodlos, Wolfgang Rao

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AU - Kunert, Birgit

AU - Park, Soo Young

AU - Resel, Roland

PY - 2021/6/22

Y1 - 2021/6/22

N2 - The highly luminescent dicyanodistyrylbenzene-based charge-transfer (CT) cocrystal based on isometric donor and acceptor molecules with a mixing ratio of 2:1 is characterized in the thin film regime. Physical vapor deposited films prepared at different substrate temperatures are analyzed in terms of their thin film structure and transistor performance. The thin film morphologies and crystallographic properties including microstrain and mosaic spread strongly dependent on the substrate temperature. Enhanced crystal growth with rising temperatures leads to a better transistor performance reaching its maximum at 90 °C with a hole and electron mobility of 1.6 × 10-3 and 2.3 × 10-5 cm2 V-1 s-1, respectively. At higher temperatures performance decreases limited by percolation pathways between the enlarged crystals.

AB - The highly luminescent dicyanodistyrylbenzene-based charge-transfer (CT) cocrystal based on isometric donor and acceptor molecules with a mixing ratio of 2:1 is characterized in the thin film regime. Physical vapor deposited films prepared at different substrate temperatures are analyzed in terms of their thin film structure and transistor performance. The thin film morphologies and crystallographic properties including microstrain and mosaic spread strongly dependent on the substrate temperature. Enhanced crystal growth with rising temperatures leads to a better transistor performance reaching its maximum at 90 °C with a hole and electron mobility of 1.6 × 10-3 and 2.3 × 10-5 cm2 V-1 s-1, respectively. At higher temperatures performance decreases limited by percolation pathways between the enlarged crystals.

KW - ambipolar organic transistor

KW - charge transfer crystal

KW - organic thin film transistor

KW - physical vapor deposition

KW - X-ray diffraction

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DO - 10.1021/acsaelm.1c00367

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JF - ACS Applied Electronic Materials

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Thin Film Growth of a Charge Transfer Cocrystal (DCS/TFPA) for Ambipolar Thin Film Transistors

Abstract

Keywords

ASJC Scopus subject areas

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