Thin Film Growth of a Charge Transfer Cocrystal (DCS/TFPA) for Ambipolar Thin Film Transistors

Wolfgang Rao Bodlos*, Sang Kyu Park, Birgit Kunert, Soo Young Park, Roland Resel*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The highly luminescent dicyanodistyrylbenzene-based charge-transfer (CT) cocrystal based on isometric donor and acceptor molecules with a mixing ratio of 2:1 is characterized in the thin film regime. Physical vapor deposited films prepared at different substrate temperatures are analyzed in terms of their thin film structure and transistor performance. The thin film morphologies and crystallographic properties including microstrain and mosaic spread strongly dependent on the substrate temperature. Enhanced crystal growth with rising temperatures leads to a better transistor performance reaching its maximum at 90 °C with a hole and electron mobility of 1.6 × 10-3 and 2.3 × 10-5 cm2 V-1 s-1, respectively. At higher temperatures performance decreases limited by percolation pathways between the enlarged crystals.

Original languageEnglish
Pages (from-to)2783-2789
Number of pages7
JournalACS Applied Electronic Materials
Issue number6
Publication statusPublished - 22 Jun 2021


  • ambipolar organic transistor
  • charge transfer crystal
  • organic thin film transistor
  • physical vapor deposition
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrochemistry

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