Threshold voltage compensated RF-DC power converters in a 40 nm CMOS technology

Lukas Zöscher, Peter Herkess, Jasmin Grosinger, Ulrich Muehlmann, Dominik Amschl, Hubert Watzinger, Wolfgang Bösch

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review


Circuit techniques termed as threshold voltage (Vth) compensation are utilized for CMOS RF-DC power converters or more specifically RF charge pumps to improve the power conversion efficiency at low levels of RF input voltage. In this work, we present two differential RF charge pumps for UHF RFID transponder ICs that include a Vth compensation. The first circuit uses gate biasing for Vth compensation, whereas the second circuit design follows a combined approach of gate and bulk biasing. The circuits have been manufactured in a 40nm low-power CMOS technology. Measurement results demonstrate that the power conversion efficiency can be improved from 39% to 42% at a given output power of 4μW and an output voltage of 1V by using bulk biasing. Both circuits show a low input quality factor of 13 at this output power level and allow therefore the implementation of highly sensitive broadband UHF RFID transponders.

Original languageEnglish
Title of host publicationProceedings - 2016 24th Austrian Workshop on Microelectronics, Austrochip 2016
PublisherInstitute of Electrical and Electronics Engineers
Number of pages5
ISBN (Electronic)9781509010400
Publication statusPublished - 10 Jan 2017
Event24th Austrian Workshop on Microelectronics: Austrochip 2016 - Holiday Inn Hotel, Villach, Austria
Duration: 19 Oct 201619 Oct 2016


Workshop24th Austrian Workshop on Microelectronics


  • Charge pumps
  • Energy harvesting
  • Radiofrequency identification
  • Rectifiers
  • UHF integrated circuits

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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