Transient co-simulation of electromagnetic emissions caused by a SiC traction inverter

Jan Hansen; Philipp Hillenbrand; S. Tenbohlen; Michael Beltle

doi:10.1109/EMCEurope.2017.8094649

Transient co-simulation of electromagnetic emissions caused by a SiC traction inverter

Jan Hansen, Philipp Hillenbrand, S. Tenbohlen, Michael Beltle

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

We present EMI simulations of a silicon carbide MOSFET traction inverter. The simulations are based on a transient circuit simulation and frequency domain simulations of different 3D geometry models. In a first step, an equivalent circuit is derived from parts of the geometry model and combined with an analytical model of the MOSFETs and an equivalent circuit model of the DC link capacitor. The results from the time domain simulation are used as input data for a frequency domain simulation in a second step. This part of the simulation is based on geometry models of the complete CISPR25 test setup including one monopole and one biconical antenna. The combination of both simulations can reproduce the conducted and radiated emissions of the inverter up to 110 MHz even if a filter network is added to the DC side of the inverter.

Original language	English
Title of host publication	2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE
Number of pages	7
DOIs	https://doi.org/10.1109/EMCEurope.2017.8094649
Publication status	Published - 4 Sept 2017
Externally published	Yes
Event	2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE: EMC Europe 2017 - Angers, France Duration: 4 Sept 2017 → 8 Sept 2017

Conference

Conference	2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE
Country/Territory	France
City	Angers
Period	4/09/17 → 8/09/17

Access to Document

10.1109/EMCEurope.2017.8094649

Cite this

Hansen, J, Hillenbrand, P, Tenbohlen, S & Beltle, M 2017, Transient co-simulation of electromagnetic emissions caused by a SiC traction inverter. in 2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE. 2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE, Angers, France, 4/09/17. https://doi.org/10.1109/EMCEurope.2017.8094649

@inproceedings{f9428854914c4cdba8bc98bb96200f8f,

title = "Transient co-simulation of electromagnetic emissions caused by a SiC traction inverter",

abstract = "We present EMI simulations of a silicon carbide MOSFET traction inverter. The simulations are based on a transient circuit simulation and frequency domain simulations of different 3D geometry models. In a first step, an equivalent circuit is derived from parts of the geometry model and combined with an analytical model of the MOSFETs and an equivalent circuit model of the DC link capacitor. The results from the time domain simulation are used as input data for a frequency domain simulation in a second step. This part of the simulation is based on geometry models of the complete CISPR25 test setup including one monopole and one biconical antenna. The combination of both simulations can reproduce the conducted and radiated emissions of the inverter up to 110 MHz even if a filter network is added to the DC side of the inverter.",

author = "Jan Hansen and Philipp Hillenbrand and S. Tenbohlen and Michael Beltle",

year = "2017",

month = sep,

day = "4",

doi = "10.1109/EMCEurope.2017.8094649",

language = "English",

booktitle = "2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE",

note = "2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE : EMC Europe 2017 ; Conference date: 04-09-2017 Through 08-09-2017",

}

TY - GEN

T1 - Transient co-simulation of electromagnetic emissions caused by a SiC traction inverter

AU - Hansen, Jan

AU - Hillenbrand, Philipp

AU - Tenbohlen, S.

AU - Beltle, Michael

PY - 2017/9/4

Y1 - 2017/9/4

N2 - We present EMI simulations of a silicon carbide MOSFET traction inverter. The simulations are based on a transient circuit simulation and frequency domain simulations of different 3D geometry models. In a first step, an equivalent circuit is derived from parts of the geometry model and combined with an analytical model of the MOSFETs and an equivalent circuit model of the DC link capacitor. The results from the time domain simulation are used as input data for a frequency domain simulation in a second step. This part of the simulation is based on geometry models of the complete CISPR25 test setup including one monopole and one biconical antenna. The combination of both simulations can reproduce the conducted and radiated emissions of the inverter up to 110 MHz even if a filter network is added to the DC side of the inverter.

AB - We present EMI simulations of a silicon carbide MOSFET traction inverter. The simulations are based on a transient circuit simulation and frequency domain simulations of different 3D geometry models. In a first step, an equivalent circuit is derived from parts of the geometry model and combined with an analytical model of the MOSFETs and an equivalent circuit model of the DC link capacitor. The results from the time domain simulation are used as input data for a frequency domain simulation in a second step. This part of the simulation is based on geometry models of the complete CISPR25 test setup including one monopole and one biconical antenna. The combination of both simulations can reproduce the conducted and radiated emissions of the inverter up to 110 MHz even if a filter network is added to the DC side of the inverter.

U2 - 10.1109/EMCEurope.2017.8094649

DO - 10.1109/EMCEurope.2017.8094649

M3 - Conference paper

BT - 2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE

T2 - 2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE

Y2 - 4 September 2017 through 8 September 2017

ER -