Ultra-Low-Power IoT 30nW 474mV 19 ppm/°C Voltage Reference and 2 nA 470 ppm/°C Current Reference

Darshan Shetty*, Christoph Steffan, Wolfgang Bösch, Jasmin Grosinger

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review


This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

Original languageEnglish
Title of host publicationIEEE International Symposium on Circuits and Systems, ISCAS 2022
PublisherInstitute of Electrical and Electronics Engineers
Number of pages5
ISBN (Electronic)9781665484855
Publication statusPublished - 2022
Event2022 IEEE International Symposium on Circuits and Systems: ISCAS 2022 - Austin, United States
Duration: 27 May 20221 Jun 2022


Conference2022 IEEE International Symposium on Circuits and Systems
Abbreviated titleISCAS 2022
Country/TerritoryUnited States


  • current reference
  • high-precision
  • second-order compensation
  • sub-threshold CMOS design
  • temperature compensation
  • ultra-low power
  • voltage reference

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fields of Expertise

  • Information, Communication & Computing

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