Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference

Darshan Shetty, Christoph Steffan, Gerald Holweg, Wolfgang Bosch, Jasmin Grosinger*

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a curvature-compensated sub-1V voltage reference (VR) and a shared-resistive nanoampere current reference (CR) in a 130nm CMOS process. The CR is used to generate a bipolar junction transistor complementary-to-absolute-temperature voltage, which is summed up with a proportional-to-absolute-temperature voltage generated using a summing network of PMOS gate-coupled pairs. The measured output voltage and current references from 10 chips (VREF and IREF) at room temperature are 469mV and 1.86nA, respectively. The measured average temperature coefficient of VREF and IREF are 29ppm/°C and 822ppm/°C over a temperature range from - 40°C to 120°C. The minimum supply voltage of the voltage-current reference is 0.95V, and the total power consumption is 30nW.

Original languageEnglish
Pages (from-to) 1030 - 1042
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume70
Issue number3
DOIs
Publication statusPublished - 2023

Keywords

  • current reference
  • curvature compensation
  • high-precision
  • Manganese
  • Resistors
  • sub-1V
  • sub-threshold CMOS design
  • temperature compensation
  • Temperature dependence
  • Temperature measurement
  • Threshold voltage
  • Transistors
  • ultra-low-power
  • Video recording
  • Voltage reference
  • voltage-current reference

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fields of Expertise

  • Information, Communication & Computing

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  • SDG 9 - Industry, Innovation, and Infrastructure

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