Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress

Andrea Minetto; Bernd Deutschmann; Nicola Modolo; Arianna Nardo; Matteo Meneghini; Enrico Zanoni; Luca Sayadi; Gerhard Prechtl; Sebastien Sicre; Oliver Haberlen

doi:10.1109/TED.2020.3025983

Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress

Andrea Minetto^*, Bernd Deutschmann, Nicola Modolo, Arianna Nardo, Matteo Meneghini, Enrico Zanoni, Luca Sayadi, Gerhard Prechtl, Sebastien Sicre, Oliver Haberlen

^*Korrespondierende/r Autor/-in für diese Arbeit

Institut für Elektronik (4390)

Publikation: Beitrag in einer Fachzeitschrift › Artikel › Begutachtung

Abstract

An analysis of hot-electron (HE) effects on the dynamic resistance ( ${dR}\,_{\mathrm{\scriptstyle ON}}$ ) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional ${dR}\,_{\mathrm{\scriptstyle ON}}$ in semi-ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results.

Originalsprache	englisch
Aufsatznummer	9214895
Seiten (von - bis)	4602-4605
Seitenumfang	4
Fachzeitschrift	IEEE Transactions on Electron Devices
Jahrgang	67
Ausgabenummer	11
DOIs	https://doi.org/10.1109/TED.2020.3025983
Publikationsstatus	Veröffentlicht - Nov. 2020

Schlagwörter

GaN
power electronics
HEMPT
Hot electron

ASJC Scopus subject areas

Elektronische, optische und magnetische Materialien
Elektrotechnik und Elektronik

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10.1109/TED.2020.3025983

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@article{51b687405da14eac931f22c59c95e41f,

title = "Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress",

abstract = "An analysis of hot-electron (HE) effects on the dynamic resistance ( ${dR}\,_{\mathrm{\scriptstyle ON}}$ ) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional ${dR}\,_{\mathrm{\scriptstyle ON}}$ in semi-ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results. ",

keywords = "Dynamic effects, gallium nitride, hard switching (HSW), hot electrons (HEs), hydrodynamic (HD) simulations, semi-ON, GaN, power electronics, HEMPT, Hot electron",

author = "Andrea Minetto and Bernd Deutschmann and Nicola Modolo and Arianna Nardo and Matteo Meneghini and Enrico Zanoni and Luca Sayadi and Gerhard Prechtl and Sebastien Sicre and Oliver Haberlen",

year = "2020",

month = nov,

doi = "10.1109/TED.2020.3025983",

language = "English",

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pages = "4602--4605",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers",

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TY - JOUR

T1 - Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress

AU - Minetto, Andrea

AU - Deutschmann, Bernd

AU - Modolo, Nicola

AU - Nardo, Arianna

AU - Meneghini, Matteo

AU - Zanoni, Enrico

AU - Sayadi, Luca

AU - Prechtl, Gerhard

AU - Sicre, Sebastien

AU - Haberlen, Oliver

PY - 2020/11

Y1 - 2020/11

N2 - An analysis of hot-electron (HE) effects on the dynamic resistance ( ${dR}\,_{\mathrm{\scriptstyle ON}}$ ) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional ${dR}\,_{\mathrm{\scriptstyle ON}}$ in semi-ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results.

AB - An analysis of hot-electron (HE) effects on the dynamic resistance ( ${dR}\,_{\mathrm{\scriptstyle ON}}$ ) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional ${dR}\,_{\mathrm{\scriptstyle ON}}$ in semi-ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results.

KW - Dynamic effects

KW - gallium nitride

KW - hard switching (HSW)

KW - hot electrons (HEs)

KW - hydrodynamic (HD) simulations

KW - semi-ON

KW - GaN

KW - power electronics

KW - HEMPT

KW - Hot electron

UR - http://www.scopus.com/inward/record.url?scp=85094891485&partnerID=8YFLogxK

U2 - 10.1109/TED.2020.3025983

DO - 10.1109/TED.2020.3025983

M3 - Article

AN - SCOPUS:85094891485

SN - 0018-9383

VL - 67

SP - 4602

EP - 4605

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

M1 - 9214895

ER -

Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress

Abstract

Schlagwörter

ASJC Scopus subject areas

Zugriff auf Dokument

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