Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress

Andrea Minetto*, Bernd Deutschmann, Nicola Modolo, Arianna Nardo, Matteo Meneghini, Enrico Zanoni, Luca Sayadi, Gerhard Prechtl, Sebastien Sicre, Oliver Haberlen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


An analysis of hot-electron (HE) effects on the dynamic resistance ( ${dR}\,_{\mathrm{\scriptstyle ON}}$ ) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional ${dR}\,_{\mathrm{\scriptstyle ON}}$ in semi-ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results.

Original languageEnglish
Article number9214895
Pages (from-to)4602-4605
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - Nov 2020


  • Dynamic effects
  • gallium nitride
  • hard switching (HSW)
  • hot electrons (HEs)
  • hydrodynamic (HD) simulations
  • semi-ON

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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