Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Conducted Emission 100%
• Applicability 50%
• Electromagnetic Interference 50%
• 3d Simulation 50%
• Simulated Result 50%
• Behavioral Model 50%
• Single Measurement 50%
• Datasheet 50%

Material Science

• Transistor 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Silicon 33%