Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz

Mehdi Gholizadeh; Ko Odreitz; Christian Riener; Amin Pak; David Pommerenke; Jan Hansen

doi:10.1109/EMCEurope57790.2023.10274374

Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz

Mehdi Gholizadeh, Ko Odreitz, Christian Riener, Amin Pak, David Pommerenke, Jan Hansen

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Abstract

Accurate transistor models in the wide frequency range are essential for the prediction of electromagnetic interference. This paper investigates the applicability of a silicon power MOSFET behavioral model to GaN transistors and shows which parameters are important for modeling high-frequency emissions. In the tested case we show that GaN modeling is feasible up to 300 MHz using datasheet information and a single measurement. In addition, a simplified power MOSFET model is proposed that requires only three lumped element values and an ideal diode. We also investigate the impact of the layout by 3D simulations, the impact of two DC voltage levels, and we compare the simulated results to measurements.

Originalsprache	englisch
Titel	2023 International Symposium on Electromagnetic Compatibility - EMC Europe, EMC Europe 2023
Herausgeber (Verlag)	ACM/IEEE
Seiten	1-6
Seitenumfang	6
ISBN (elektronisch)	9798350324006
ISBN (Print)	979-8-3503-2401-3
DOIs	https://doi.org/10.1109/EMCEurope57790.2023.10274374
Publikationsstatus	Veröffentlicht - 8 Sept. 2023
Veranstaltung	2023 International Symposium and Exhibition on Electromagnetic Compatibility: EMC Europe 2023 - Kraków, Polen Dauer: 4 Sept. 2023 → 8 Sept. 2023

Konferenz

Konferenz	2023 International Symposium and Exhibition on Electromagnetic Compatibility
Kurztitel	EMC Europe 2023
Land/Gebiet	Polen
Ort	Kraków
Zeitraum	4/09/23 → 8/09/23

ASJC Scopus subject areas

Physik der kondensierten Materie
Elektrotechnik und Elektronik

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10.1109/EMCEurope57790.2023.10274374

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Gholizadeh, M , Odreitz, K , Riener, C, Pak, A, Pommerenke, D & Hansen, J 2023, Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz. in 2023 International Symposium on Electromagnetic Compatibility - EMC Europe, EMC Europe 2023., 10274374, ACM/IEEE, S. 1-6, 2023 International Symposium and Exhibition on Electromagnetic Compatibility, Kraków, Polen, 4/09/23. https://doi.org/10.1109/EMCEurope57790.2023.10274374

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title = "Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz",

abstract = "Accurate transistor models in the wide frequency range are essential for the prediction of electromagnetic interference. This paper investigates the applicability of a silicon power MOSFET behavioral model to GaN transistors and shows which parameters are important for modeling high-frequency emissions. In the tested case we show that GaN modeling is feasible up to 300 MHz using datasheet information and a single measurement. In addition, a simplified power MOSFET model is proposed that requires only three lumped element values and an ideal diode. We also investigate the impact of the layout by 3D simulations, the impact of two DC voltage levels, and we compare the simulated results to measurements.",

keywords = "Adaptation models, Solid modeling, MOSFET, Voltage measurement, Three-dimensional displays, Layout, Resonant frequency, GaN, Conducted emission, High frequency, Behavior model",

author = "Mehdi Gholizadeh and Ko Odreitz and Christian Riener and Amin Pak and David Pommerenke and Jan Hansen",

year = "2023",

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doi = "10.1109/EMCEurope57790.2023.10274374",

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booktitle = "2023 International Symposium on Electromagnetic Compatibility - EMC Europe, EMC Europe 2023",

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AU - Gholizadeh, Mehdi

AU - Odreitz, Ko

AU - Riener, Christian

AU - Pak, Amin

AU - Pommerenke, David

AU - Hansen, Jan

PY - 2023/9/8

Y1 - 2023/9/8

N2 - Accurate transistor models in the wide frequency range are essential for the prediction of electromagnetic interference. This paper investigates the applicability of a silicon power MOSFET behavioral model to GaN transistors and shows which parameters are important for modeling high-frequency emissions. In the tested case we show that GaN modeling is feasible up to 300 MHz using datasheet information and a single measurement. In addition, a simplified power MOSFET model is proposed that requires only three lumped element values and an ideal diode. We also investigate the impact of the layout by 3D simulations, the impact of two DC voltage levels, and we compare the simulated results to measurements.

AB - Accurate transistor models in the wide frequency range are essential for the prediction of electromagnetic interference. This paper investigates the applicability of a silicon power MOSFET behavioral model to GaN transistors and shows which parameters are important for modeling high-frequency emissions. In the tested case we show that GaN modeling is feasible up to 300 MHz using datasheet information and a single measurement. In addition, a simplified power MOSFET model is proposed that requires only three lumped element values and an ideal diode. We also investigate the impact of the layout by 3D simulations, the impact of two DC voltage levels, and we compare the simulated results to measurements.

KW - Adaptation models

KW - Solid modeling

KW - MOSFET

KW - Voltage measurement

KW - Three-dimensional displays

KW - Layout

KW - Resonant frequency

KW - GaN

KW - Conducted emission

KW - High frequency

KW - Behavior model

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DO - 10.1109/EMCEurope57790.2023.10274374

M3 - Conference paper

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BT - 2023 International Symposium on Electromagnetic Compatibility - EMC Europe, EMC Europe 2023

PB - ACM/IEEE

T2 - 2023 International Symposium and Exhibition on Electromagnetic Compatibility

Y2 - 4 September 2023 through 8 September 2023

ER -

Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz

Abstract

Konferenz

ASJC Scopus subject areas

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