Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz

Mehdi Gholizadeh; Ko Odreitz; Christian Riener; Amin Pak; David Pommerenke; Jan Hansen

doi:10.1109/EMCEurope57790.2023.10274374

Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz

Mehdi Gholizadeh, Ko Odreitz, Christian Riener, Amin Pak, David Pommerenke, Jan Hansen

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

Accurate transistor models in the wide frequency range are essential for the prediction of electromagnetic interference. This paper investigates the applicability of a silicon power MOSFET behavioral model to GaN transistors and shows which parameters are important for modeling high-frequency emissions. In the tested case we show that GaN modeling is feasible up to 300 MHz using datasheet information and a single measurement. In addition, a simplified power MOSFET model is proposed that requires only three lumped element values and an ideal diode. We also investigate the impact of the layout by 3D simulations, the impact of two DC voltage levels, and we compare the simulated results to measurements.

Original language	English
Title of host publication	2023 International Symposium on Electromagnetic Compatibility - EMC Europe, EMC Europe 2023
Publisher	ACM/IEEE
Pages	1-6
Number of pages	6
ISBN (Electronic)	9798350324006
ISBN (Print)	979-8-3503-2401-3
DOIs	https://doi.org/10.1109/EMCEurope57790.2023.10274374
Publication status	Published - 8 Sept 2023
Event	2023 International Symposium and Exhibition on Electromagnetic Compatibility: EMC Europe 2023 - Kraków, Poland Duration: 4 Sept 2023 → 8 Sept 2023

Conference

Conference	2023 International Symposium and Exhibition on Electromagnetic Compatibility
Abbreviated title	EMC Europe 2023
Country/Territory	Poland
City	Kraków
Period	4/09/23 → 8/09/23

Keywords

Adaptation models
Solid modeling
MOSFET
Voltage measurement
Three-dimensional displays
Layout
Resonant frequency
GaN
Conducted emission
High frequency
Behavior model

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/EMCEurope57790.2023.10274374

Cite this

Gholizadeh, M , Odreitz, K, Riener, C, Pak, A, Pommerenke, D & Hansen, J 2023, Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz. in 2023 International Symposium on Electromagnetic Compatibility - EMC Europe, EMC Europe 2023., 10274374, ACM/IEEE, pp. 1-6, 2023 International Symposium and Exhibition on Electromagnetic Compatibility, Kraków, Poland, 4/09/23. https://doi.org/10.1109/EMCEurope57790.2023.10274374

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abstract = "Accurate transistor models in the wide frequency range are essential for the prediction of electromagnetic interference. This paper investigates the applicability of a silicon power MOSFET behavioral model to GaN transistors and shows which parameters are important for modeling high-frequency emissions. In the tested case we show that GaN modeling is feasible up to 300 MHz using datasheet information and a single measurement. In addition, a simplified power MOSFET model is proposed that requires only three lumped element values and an ideal diode. We also investigate the impact of the layout by 3D simulations, the impact of two DC voltage levels, and we compare the simulated results to measurements.",

keywords = "Adaptation models, Solid modeling, MOSFET, Voltage measurement, Three-dimensional displays, Layout, Resonant frequency, GaN, Conducted emission, High frequency, Behavior model",

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AU - Gholizadeh, Mehdi

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AU - Pommerenke, David

AU - Hansen, Jan

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AB - Accurate transistor models in the wide frequency range are essential for the prediction of electromagnetic interference. This paper investigates the applicability of a silicon power MOSFET behavioral model to GaN transistors and shows which parameters are important for modeling high-frequency emissions. In the tested case we show that GaN modeling is feasible up to 300 MHz using datasheet information and a single measurement. In addition, a simplified power MOSFET model is proposed that requires only three lumped element values and an ideal diode. We also investigate the impact of the layout by 3D simulations, the impact of two DC voltage levels, and we compare the simulated results to measurements.

KW - Adaptation models

KW - Solid modeling

KW - MOSFET

KW - Voltage measurement

KW - Three-dimensional displays

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KW - Resonant frequency

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KW - Conducted emission

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Modeling a GaN Transistor and its Impact on Conducted Emission up to 300 MHz

Abstract

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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