Characterization of Niobium-Nitride Layers on SiO2 by Means of EELS and EFTEM

  • Brunegger, Albert (Co-Investigator (CoI))
  • Kothleitner, Gerald (Principal Investigator (PI))
  • Rogers, Michael (Co-Investigator (CoI))

Project: Research project

Project Details


Barrier layers play an increasingly important role in the semiconductor fabrication process. A niobium nitride barrier for instance can prevent the diffusion of copper in semiconducting devices. 200 nm thin niobium-nitride layers are deposited onto SiO2 substrates via rapid thermal processing (RTP) and are investigated with TEM, EFTEM and EELS. EELS line-scans are recorded and subsequently analyzed with respect to EELS-near-edge fine-structures. The results are then compared with data obtained with other techniques like SNMS and XRD.
Effective start/end date1/06/9931/12/09


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