Research output per year
Research output per year
Project Details
Description
Barrier layers play an increasingly important role in the semiconductor fabrication process. A niobium nitride barrier for instance can prevent the diffusion of copper in semiconducting devices.
200 nm thin niobium-nitride layers are deposited onto SiO2 substrates via rapid thermal processing (RTP) and are investigated with TEM, EFTEM and EELS. EELS line-scans are recorded and subsequently analyzed with respect to EELS-near-edge fine-structures. The results are then compared with data obtained with other techniques like SNMS and XRD.
| Status | Finished |
|---|---|
| Effective start/end date | 1/06/99 → 31/12/09 |
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Research output
- 1 Conference paper
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Vergleich der Eigenschaften aufgedampfter und aufgesputterter Niob-Schichten auf Silicium- und Saphirwafern
Warbichler, P., Kolbesen, B., Brunkahl, O., Angelkort, C., Bock, W., Oechsner, H., Röll, K. & Thoma, K., 2003, 12. Tagung Festkörperanalytik, Wien, Kurzfassungen,. ., p. P19-P19Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review