Sign-inversion of charging-induced variation of electrical resistance of nanoporous platinum

Eva-Maria Steyskal; Maximilian Besenhard; Stephan Landgraf; Yi Zhong; Jörg Weissmüller; Peter Pölt; Mihaela Albu; Roland Würschum

doi:10.1063/1.4755808

Sign-inversion of charging-induced variation of electrical resistance of nanoporous platinum

Eva-Maria Steyskal, Maximilian Besenhard, Stephan Landgraf, Yi Zhong, Jörg Weissmüller, Peter Pölt, Mihaela Albu, Roland Würschum

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	073703-1-073703-7
Journal	Journal of Applied Physics
DOIs	https://doi.org/10.1063/1.4755808
Publication status	Published - 2012

Fields of Expertise

Advanced Materials Science

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10.1063/1.4755808

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title = "Sign-inversion of charging-induced variation of electrical resistance of nanoporous platinum",

author = "Eva-Maria Steyskal and Maximilian Besenhard and Stephan Landgraf and Yi Zhong and J{\"o}rg Weissm{\"u}ller and Peter P{\"o}lt and Mihaela Albu and Roland W{\"u}rschum",

year = "2012",

doi = "10.1063/1.4755808",

language = "English",

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T1 - Sign-inversion of charging-induced variation of electrical resistance of nanoporous platinum

AU - Steyskal, Eva-Maria

AU - Besenhard, Maximilian

AU - Landgraf, Stephan

AU - Zhong, Yi

AU - Weissmüller, Jörg

AU - Pölt, Peter

AU - Albu, Mihaela

AU - Würschum, Roland

PY - 2012

Y1 - 2012

UR - http://jap.aip.org/resource/1/japiau/v112/i7/p073703_s1

U2 - 10.1063/1.4755808

DO - 10.1063/1.4755808

M3 - Article

SN - 1089-7550

SP - 073703-1-073703-7

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Sign-inversion of charging-induced variation of electrical resistance of nanoporous platinum

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Nanoscale and porous materials with electrochemically controlled properties

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Sign-inversion of charging-induced variation of electrical resistance of nanoporous platinum

Fields of Expertise

Access to Document

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Nanoscale and porous materials with electrochemically controlled properties

Cite this