Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors

Karin Zojer, Thomas Rothländer, Johanna Kraxner, Roland Schmied, Ursula Palfinger, Harald Plank, Werner Grogger, Anja Haase, Herbert Gold, Barbara Stadlober

Research output: Contribution to journalArticlepeer-review


Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fact, device structures with a small single-sided interlayer electrode gap directly probe the detrimental contact resistance arising from the presence of an injection barrier. By employing a self-alignment nanoimprint lithography technique, asymmetric coplanar organic transistors with an intentional gap of varying size (< 0.2 μm) between gate and one interlayer electrode are fabricated. An electrode overlap exceeding 1 μm with the other interlayer has been kept. Gaps, be them source or drain-sided, do not preclude transistor operation. The operation of the device with a source-gate gap reveals a current reduction up to two orders of magnitude compared to a source-sided overlap. Drift-diffusion based simulations reveal that this marked reduction is a consequence of a weakened gate-induced field at the contact which strongly inhibits injection.
Original languageEnglish
Article number31387
JournalScientific Reports
Publication statusPublished - 2016

ASJC Scopus subject areas

  • Materials Science(all)

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

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