TY - JOUR
T1 - Three-dimensional distribution of individual atoms in the channels of beryl
AU - Knez, D
AU - Gspan, C
AU - Simic, N
AU - Mitsche, S
AU - Fitzek, H
AU - Gatterer, K
AU - Wiltsche, H
AU - Kothleitner, G
AU - Grogger, W
AU - Hofer, F
PY - 2024/12
Y1 - 2024/12
N2 - Single atom detection in nanoporous materials is a significant challenge, particularly due to their sensitivity to electron irradiation. Here, natural beryl (Be3Al2Si6O18) is used as a model system to quantitatively analyse the occupancy of its atomic channels. High-angle annular dark-field imaging in a scanning transmission electron microscope is employed, revealing the presence of Cs atoms within the channels. Through statistical analysis of atomic column intensities and comparison with a series of multislice simulations, we successfully pinpoint the three-dimensional positions of individual Cs atoms. Our findings indicate a non-uniform distribution of Cs atoms in the crystal. Importantly, by extracting both the crystal thickness and atomic positions from a single high-resolution micrograph, we effectively minimize the adverse effects of beam damage. This approach offers a promising pathway for accurately determining the three-dimensional distribution of dopant atoms in various porous materials, opening new possibilities for the study and application of these technologically important materials.
AB - Single atom detection in nanoporous materials is a significant challenge, particularly due to their sensitivity to electron irradiation. Here, natural beryl (Be3Al2Si6O18) is used as a model system to quantitatively analyse the occupancy of its atomic channels. High-angle annular dark-field imaging in a scanning transmission electron microscope is employed, revealing the presence of Cs atoms within the channels. Through statistical analysis of atomic column intensities and comparison with a series of multislice simulations, we successfully pinpoint the three-dimensional positions of individual Cs atoms. Our findings indicate a non-uniform distribution of Cs atoms in the crystal. Importantly, by extracting both the crystal thickness and atomic positions from a single high-resolution micrograph, we effectively minimize the adverse effects of beam damage. This approach offers a promising pathway for accurately determining the three-dimensional distribution of dopant atoms in various porous materials, opening new possibilities for the study and application of these technologically important materials.
UR - http://www.scopus.com/inward/record.url?scp=85185563950&partnerID=8YFLogxK
U2 - 10.1038/s43246-024-00458-8
DO - 10.1038/s43246-024-00458-8
M3 - Article
SN - 2662-4443
VL - 5
JO - Communications Materials
JF - Communications Materials
IS - 1
M1 - 19
ER -